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Daneshyari Surfaces and Interfaces Journas Latest Articles

Surfaces and Interfaces Research Articles

A new method of fabrication of heat transfer surfaces with micro-structured profile
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Silicone crosslinked by ionizing radiation as potential polymeric matrix for drug delivery
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Extractable proteins from field radiation vulcanized natural rubber latex
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Degradation of polyimide under irradiation with swift heavy ions
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Dynamical mechanical analysis of proton beam irradiated polyimide
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Suppression of the oxidative degradation of polymer by sputtered silicon oxide coating
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Suitability of some common polymer films for MeV proton beam dosimetry
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Characterization of blends of PP and SBS vulcanized with gamma irradiation
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Gamma irradiation effects on the grafting of low-density polyethylene with diethyl maleate
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Grafting of a LLDPE using gamma irradiation
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Proton exchange membranes prepared by grafting of styrene/divinylbenzene into crosslinked PTFE membranes
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Track core size estimation for heavy ions in CR-39 by AFM and UV methods
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Grafting of acrylic acid onto polypropylene films irradiated with argon ions
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Evaluation of the mechanical properties of carbon fiber after electron beam irradiation
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Virus inactivation studies using ion beams, electron and gamma irradiation
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Radiation cross-linked polymers: Recent developments and new applications
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Contents
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Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering
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Characterization of BF2+ implanted monitor for rapid thermal processor temperature calibration
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Silver negative-ion implantation to sol-gel TiO2 film for improving photocatalytic property under fluorescent light
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Off-resonance microwave ion source for high-current molecular ion-beams
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Surface modification of polymeric materials by plasma immersion ion implantation
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Ultra-high resolution mass spectroscopy of boron cluster ions
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Silicon field emission array as novel charge neutralization device for high current ion implanter
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Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide
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Application of the Racah package for dealing with the expressions from the atomic shell model
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Hyperfine quenching of resonances in dielectronic recombination of zinc-like Pt48+
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Investigation of fluorescence radiation following radiative recombination of ions and electrons
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Systematic Dirac-Fock method study of the X-ray spectra accompanying the ionization in collision processes: The structure of the Kβ2L0Mr lines
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Dirac-Fock method study on the structure and shapes of various KL1 X-ray satellite lines of terbium and tantalum
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Design considerations for a Johann X-ray crystal spectrometer using double reflection in a single crystal to obtain spatially resolved information about a hot plasma seeded with highly charged ions
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Recoil-ion momentum spectroscopy of multiply charged argon ions produced by intense (∼1016 W cm−2) laser light
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Multiple ionization of ions and atoms by intense ultrafast laser pulses
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Plans for laser spectroscopy of trapped cold hydrogen-like HCI
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Precision lifetime measurement of the 2p 2P3/2 level for Li-like Ni by beam-foil spectroscopy
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X-ray spectroscopy of Be- to He-like germanium
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Calculation of HCI spectra using their global characteristics
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Algebraic tools for studying the properties and behaviour of hydrogen-like ions
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Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe
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EUV spectroscopy of highly charged xenon ions
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Atomic radiative transition probabilities using negative-energy orbitals in fully variational wave functions
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Relativistic calculations for highly charged ions
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Electric quadrupole moment of a hydrogen-like ion in s and p1/2 states
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Full-relativistic calculation of nuclear polarization in atomic and muonic levels
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QED effects in transition energies of low lying levels for highly ionized boron like ions
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Investigation of the 4D metastable state in Na-like ions
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On the metastable level in Ni-like ions
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Surface modification of ethylene-norbornene copolymer by irradiation with N4+ ion beams
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Radiolysis effects on polyethylene terephtalate
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Mechanical, thermal, rheological and morphological behaviour of irradiated PP/HA composites
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Strain effect on the tilt angle in manganite thin films
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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants
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New method of Plasma doping with in-situ Helium pre-amorphization
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Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniques
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Ultra-shallow junction formation by B18H22 ion implantation
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Ion implantation in advanced planar and vertical devices
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Contents
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Subject index
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Calendar
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Invited review: Some challenging unsolved problems in atomic collisions in solids
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Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
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Soft X-ray absorption at the O K-edge in rutile-type natural oxides
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Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2
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Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering
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Direct observation of ordered orbital of YTiO3 by the X-ray magnetic diffraction technique
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The materials science beamline at the Swiss Light Source
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A fully integrated multi-channel detector for electron spectroscopy
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High resolution near-surface stress determination using synchrotron X-rays
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High-resolution strain mapping in bulk samples using full-profile analysis of energy dispersive synchrotron X-ray diffraction data
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Automatic X-ray crystallographic phasing at LNLS
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Study of crystalline structures via physical determination of triplet phase invariants
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Phase separation during silica gel formation followed by time-resolved SAXS
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Structure and electron-ion correlation of liquid germanium
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An anomalous X-ray scattering study on glassy superionic conductor (As2Se3)1−x(CuI)x using a third-generation synchrotron radiation facility
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High energy X-ray diffraction analysis of strain and residual stress in silicon nitride ceramic diffusion bonds
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Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation
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Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction
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Investigations into the wear of a WL10 ion source
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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants
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Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence
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Characterization of Pt oxide thin film fabricated by plasma immersion ion implantation
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Mass and energy analysis of the ions in a plasma flood system
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An ECR ion source directly excited in a selected microwave mode cavity resonator for material processing
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Langmuir probe analysis of a BF3 discharge in a high current ion source
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Development of polyatomic ion beam system using liquid organic materials
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Gas cluster ion beams for wafer processing
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Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
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Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAs
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Time-resolved monitoring of cement hydration: Influence of cellulose ethers on hydration kinetics
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New developments in the applications of proton beam writing
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Dual gate oxide integrity improvement by implementing nitrogen implantation technology
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Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate
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The effects of energy non-monochromaticity of 11B ion beams on 11B diffusion
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Transient enhanced diffusion and deactivation of ion-implanted As in strained Si
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Advanced 65 nm CMOS devices fabricated using ultra-low energy plasma doping
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Ultra shallow junction formation and dopant activation study of Ga implanted Si
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Implantation induced electrical isolation of sulphur doped GaNxAs1−x layers
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Comparison of elemental boron and boron halide implants into silicon
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Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon
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Formation of β-FeSi2 by implanting multicharged iron ions produced in an ECR ion source
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