
In situ monitoring of periodic structures during MOVPE of III-nitrides
Keywords: A1 پراش اشعه ایکس; 78.20.Ci; 78.66.Fd; 79.60.Jv; 81.15.Gh; 81.70.Fy; 61.10.Nz; A1. In situ characterization; A1. Laser reflectometry; A1. Periodic structures; A1. X-ray diffraction; B1. MOCVD; B3. Nitride semiconductors;