Keywords: A3 اپیتاکسی فاز بخار; A2. Growth from vapor; A1. Nanostructures; B1. Oxides; B1. Tungsten oxide; A3. Vapor phase epitaxy
مقالات ISI A3 اپیتاکسی فاز بخار (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds
Keywords: A3 اپیتاکسی فاز بخار; A1. Defects; A1. Stresses; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitride; B2. Semiconducting III-V materials;
Studies on high temperature vapor phase epitaxy of GaN
Keywords: A3 اپیتاکسی فاز بخار; A1. Impurities; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition
Keywords: A3 اپیتاکسی فاز بخار; A1. Crystal structure; A3. Physical vapor deposition processes; A3. Vapor phase epitaxy; B2. Magnetic materials; B2. Piezoelectric materials;
Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source
Keywords: A3 اپیتاکسی فاز بخار; A1. Thermodynamic properties; A3. Vapor phase epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN
Keywords: A3 اپیتاکسی فاز بخار; A1. Characterization; A2. Growth from vapor; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Large-scale synthesis of TiC whiskers by carbothermal reduction with microcrystalline cellulose as the carbon source
Keywords: A3 اپیتاکسی فاز بخار; A1. Crystal morphology; A1. Nanostructures; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Titanium compounds;
Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3
Keywords: A3 اپیتاکسی فاز بخار; A1. Line defects; A1. Impurities; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Vapor phase epitaxy of monocrystal tungsten coatings
Keywords: A3 اپیتاکسی فاز بخار; A1. Growth models; A3. Vapor phase epitaxy; B1. Rate-determining step; B1. Tungsten coating;
Deflection of threading dislocations in patterned 4H-SiC epitaxial growth
Keywords: A3 اپیتاکسی فاز بخار; A1. Characterization; A1. Line defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials;
Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
Keywords: A3 اپیتاکسی فاز بخار; A1. Nucleation; A1. Characterization; A1. Crystal structure; A3. Vapor phase epitaxy; B1. Cubic silicon carbide;
Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on (001) ceria
Keywords: A3 اپیتاکسی فاز بخار; A1. Crystal structure; A3. Vapor phase epitaxy; B1. Tin oxide; B1. Cerium oxide;
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
Keywords: A3 اپیتاکسی فاز بخار; A2. Growth from vapor; A2. Single crystal growth; A3. Vapor Phase Epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Effect of N2O on high-rate homoepitaxial growth of CVD single crystal diamonds
Keywords: A3 اپیتاکسی فاز بخار; A1. Crystal morphology; A2. Single crystal growth; A3. Chemical vapor deposition processes; A3. Vapor phase epitaxy; B1. Diamond
Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge
Keywords: A3 اپیتاکسی فاز بخار; A1. Thermodynamic analysis; A3. Vapor phase epitaxy; B1. GaAsN; B2. Semiconducting III–V materials; B3. Solar cells
Growth temperature dependence of the background doping in MOVPE-grown InAs
Keywords: A3 اپیتاکسی فاز بخار; A1. Doping; A1. Impurities; A1. Hydrogen; A3. Vapor phase epitaxy; B2. Passivation; B2. Semiconducting indium arsenide
Cubic SiC formation on the C-face of 6H–SiC (0 0 0 1) substrates
Keywords: A3 اپیتاکسی فاز بخار; A1. Nucleation; A1. Characterization; A1. Polar surfaces; A3. Vapor phase epitaxy; B1. Cubic silicon carbide
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
Keywords: A3 اپیتاکسی فاز بخار; A1. Characterization; A3. Vapor phase epitaxy; B2. Semiconducting germanium;
Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge
Keywords: A3 اپیتاکسی فاز بخار; A1. Characterization; A1. Diffusion; A3. Vapor phase epitaxy; B2. Semiconducting germanium;
Wafer curvature analysis in 3C-SiC layers grown on (0Â 0Â 1) and (1Â 1Â 1) Si substrates
Keywords: A3 اپیتاکسی فاز بخار; A1. Stresses; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds;
Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3
Keywords: A3 اپیتاکسی فاز بخار; A1. Impurities; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Patterned growth of high aspect ratio silicon wire arrays at moderate temperature
Keywords: A3 اپیتاکسی فاز بخار; A1. Doping; A3. Vapor phase epitaxy; B2. Semiconducting silicon; B3. Solar cells
Surface preparation of Si(1 0 0) by thermal oxide removal in a chemical vapor environment
Keywords: A3 اپیتاکسی فاز بخار; A1. Si(1 0 0) surface; A1. Surface structure; A1. X-ray photoelectron spectroscopy; A3. Chemical vapor deposition processes; A3. Hydrogen annealing; A3. Vapor phase epitaxy
Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers
Keywords: A3 اپیتاکسی فاز بخار; A1. Defects; A1. Basal plane dislocation; A1. Etching; A3. Chemical vapor deposition processes; A3. Vapor phase epitaxy; B1. Silicon carbide
Effect of initial substrate conditions on growth of cubic silicon carbide
Keywords: A3 اپیتاکسی فاز بخار; A1. Nucleation; A1. Characterization; A1. Substrates; A3. Vapor phase epitaxy; B1. Cubic silicon carbide.
Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition
Keywords: A3 اپیتاکسی فاز بخار; A1. X-ray spectroscopy in chemical analysis; A3. Vapor phase epitaxy; B1. Nanomaterials
Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases
Keywords: A3 اپیتاکسی فاز بخار; A1. Atomic force microscopy; A3. Vapor phase epitaxy; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
Keywords: A3 اپیتاکسی فاز بخار; A1. Growth models; A3. Vapor phase epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Surface-diffusion induced growth of ZnO nanowires
Keywords: A3 اپیتاکسی فاز بخار; 81.05.Dz; 81.15.Aa; 81.15.Kk; 62.23.HjA1. Nanowires; A3. Vapor phase epitaxy; B1. Zinc oxide; B2. Semiconducting II–VI materials
Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار; 68.37.Hk; 68.55.A−; 81.05.Dz; 81.15.KkA1. Crystal structure; A1. Nucleation; A3. Vapor phase epitaxy; B1. Oxide; B1. Zinc compounds
Germanium films with strong in-plane and out-of-plane texture on flexible, randomly textured metal substrates
Keywords: A3 اپیتاکسی فاز بخار; 81.05.Cy; 81.15.Jj; 81.15.Kk; 68.55.jm; 81.15.CdA1. Texture; A3. Ion beam-assisted deposition; A3. Vapor phase epitaxy; B2. Photovoltaic materials; B2. Semiconducting germanium; B2. Semiconducting gallium arsenide
Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography
Keywords: A3 اپیتاکسی فاز بخار; 61.72.Ff; 81.05.HdA1. Characterization; A1. Line defects; A1. X-ray topography; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
The role of collisions in the aligned growth of vertical nanowires
Keywords: A3 اپیتاکسی فاز بخار; 81.05.Ea; 81.07.Vb; 81.15.Gh; 81.16.âc; A1. Nanostructures; A3.Metalorganic chemical vapor deposition; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
InP nanostructures formed in GaP-based nanowires grown on Si(1 1 1) substrates
Keywords: A3 اپیتاکسی فاز بخار; 61.46.Km; 68.70.+w; 68.65.La; 78.67.LtA1. Crystal structure; A3. Vapor phase epitaxy; B1. Nanowire; B2. Semiconducting III–V materials
Microstructural properties and atomic arrangements of GaN nanorods grown on Si (1Â 1Â 1) substrates by using hydride vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار; 61.46.Km; 61.72.Uj; 68.37.Lp; 61.05.Cp; A1. Nanostructures; A3. Vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials;
Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار; 68.55.Ag; 81.15.Kk; 81.30.DzA1. Phase diagrams; A3. Vapor phase epitaxy; B1. Nitrides
The core effect of misfit dislocations in heteroepitaxy
Keywords: A3 اپیتاکسی فاز بخار; 61.72.LkA1. Adsorption; A1. Line defects; A1. Nanostructures; A1. Stresses; A3. Atomic layer epitaxy; A3. Vapor phase epitaxy
Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces
Keywords: A3 اپیتاکسی فاز بخار; 81.15.Kk; 81.10.Bk; 81.05.Ea; 31.15.ArA1. Computer simulation; A1. Desorption; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds
Effect of source composition on the vapor phase epitaxy of Cd1âxZnxTe large-area layers
Keywords: A3 اپیتاکسی فاز بخار; 81.10.F; 81.05.D; A2. Bridgman technique; A3. Vapor phase epitaxy; B1. CdZnTe; B2. Semiconducting II-VI;
Simple technique for measuring the filled volume of liquid or solid CVD precursor chemicals in bubblers
Keywords: A3 اپیتاکسی فاز بخار; 81.15.−z; 85.40.Sz; 81.15.GhA2. Growth from vapor; A3. Metalorganic chemical vapor deposition; A3. Chemical vapor deposition processes; A3. Organometallic vapor phase epitaxy; A3. Vapor phase epitaxy
Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates
Keywords: A3 اپیتاکسی فاز بخار; 81.15.KkA1. Computer simulation; A1. Convection; A1. Fluid flows; A3. Vapor phase epitaxy; B2. Semiconducting silicon; B3. Solar cells
Modified LPE system used to diffuse Cd to obtain InSb infrared detectors
Keywords: A3 اپیتاکسی فاز بخار; 71.55.Eq; 71.55.Gs; 72.40.+W; 73.40.Kp; 73.50.PzA1. Atomic force microscopy; A1. Optical microscopy; A1. X-ray diffraction; A3. Vapor phase epitaxy; B1. InSb; B1. Te; B1. Cd compounds; B3. Homojunctions Semiconductor Infrared devices
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth
Keywords: A3 اپیتاکسی فاز بخار; 61.72.FfA1. Characterization; A1. Line defects; A1. Planar defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
Influence of hydrogen coverage on Si(1Â 1Â 1) substrate on the growth of GaN buffer layer
Keywords: A3 اپیتاکسی فاز بخار; 31.15.Ar; 68.43.Bc; 81.05.Ea; 81.10.Bk; A1. Adsorption; A1. Computer simulation; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides;
Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array
Keywords: A3 اپیتاکسی فاز بخار; A1. Crystal structure; A1. Doping; A2. Growth from vapor; A3. Vapor phase epitaxy; B1. Nanomaterials; B2. Semiconductor II–VI materials
Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2
Keywords: A3 اپیتاکسی فاز بخار; 68.55.Jk; 81.05.Ea; 81.15.Kk; 82.30.LpA1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds
Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition
Keywords: A3 اپیتاکسی فاز بخار; 72.80.Jc; 81.15.−zA3. Hot-wall epitaxy; A3. Vapor phase epitaxy; B2. Semiconducting materials
Observation of epitaxial growth of pentacene thin films on KCl substrate by X-ray diffractometry
Keywords: A3 اپیتاکسی فاز بخار; 81.15.Kk; 61.10.NzA1. X-ray diffraction; A3. Vapor phase epitaxy; B1. Organic compounds; B2. Semiconducting materials
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
Keywords: A3 اپیتاکسی فاز بخار; 61.72.FfA1. Characterization; A1. Line defects; A1. Planar defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
A fusion-crystalization mechanism for nucleation of misfit dislocations in FCC epitaxial films
Keywords: A3 اپیتاکسی فاز بخار; 68.55.Ac; 02.70.NsA1. Line defects; A1. Molecular dynamics; A1. Nucleation; A3. Vapor phase epitaxy