GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy
Keywords: A1 فوتولومینسانس; 81.05.Ea; 81.15.Hi; 78.55.Cr; A1. Photoluminescence; A3. Buffer layer; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Light-emitting diodes;