Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions Fulltext Access 4 Pages 2005
Repair and capping of porous MSQ films using chlorosilanes and supercritical CO2 Fulltext Access 4 Pages 2005
Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects Fulltext Access 4 Pages 2005
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices Fulltext Access 4 Pages 2005
Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode hole fluence Fulltext Access 4 Pages 2005
Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond Fulltext Access 4 Pages 2005
The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials Fulltext Access 4 Pages 2005
Use of ferroelectric gate insulator for thin film transistors with ITO channel Fulltext Access 4 Pages 2005
Oxygen vacancies in amorphous silica: structure and distribution of properties Fulltext Access 4 Pages 2005
HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks Fulltext Access 4 Pages 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques Fulltext Access 4 Pages 2005
A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals Fulltext Access 4 Pages 2005
Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices Fulltext Access 4 Pages 2005
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5 Fulltext Access 4 Pages 2005
Coupling effect between the front and back interfaces in thin SOI MOSFETs Fulltext Access 4 Pages 2005
Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs Fulltext Access 4 Pages 2005
Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric Fulltext Access 4 Pages 2005
Improved performance of organic light-emitting devices with 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole Fulltext Access 4 Pages 2005
Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer Fulltext Access 4 Pages 2005
Design aspects for the fabrication of gratings for DFB-lasers by direct write electron-beam lithography Fulltext Access 4 Pages 2005
Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM Fulltext Access 4 Pages 2005
An approach to modeling of silicon oxidationin a wet ultra-diluted ambient Fulltext Access 4 Pages 2005
Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface? Fulltext Access 4 Pages 2005
Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed Fulltext Access 4 Pages 2005
Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages Fulltext Access 4 Pages 2005
Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching Fulltext Access 4 Pages 2005
Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode Fulltext Access 4 Pages 2005
Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides Fulltext Access 4 Pages 2005
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates Fulltext Access 4 Pages 2005
Analysis of defects at the interface between high-k thin films and (1Â 0Â 0) silicon Fulltext Access 4 Pages 2005
Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks Fulltext Access 4 Pages 2005
Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy Fulltext Access 4 Pages 2005
Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers Fulltext Access 4 Pages 2005
Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission Fulltext Access 4 Pages 2005
Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements Fulltext Access 4 Pages 2005
Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers Fulltext Access 4 Pages 2005
Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer grown by PECVD Fulltext Access 4 Pages 2005
Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors Fulltext Access 4 Pages 2005
Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate Fulltext Access 4 Pages 2005
Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force Microscopy Fulltext Access 4 Pages 2005
Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(Ny) insulators probed by electron spin resonance Fulltext Access 4 Pages 2005
Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs Fulltext Access 4 Pages 2005
45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment Fulltext Access 4 Pages 2005
Microscopic theory for the valence intersubband absorption of quantum wells Fulltext Access 4 Pages 2005
Structure and composition evolutions of Er-doped Si-rich SiO2 film under annealing Fulltext Access 4 Pages 2005
Effect of Mn2+ ions on the photoluminescence characteristics of Eu3+-doped Zn3(BO3)2 nanoparticles Fulltext Access 4 Pages 2005
Performance modeling and evaluation of high-performance parallel and distributed systems Fulltext Access 4 Pages 2005
Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications Fulltext Access 4 Pages 2005
Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing Fulltext Access 4 Pages 2005
Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface Fulltext Access 4 Pages 2005
PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application Fulltext Access 4 Pages 2005
Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements Fulltext Access 4 Pages 2005
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide Fulltext Access 4 Pages 2005
Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects Fulltext Access 4 Pages 2005
Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive constant voltage stress Fulltext Access 4 Pages 2005
Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model Fulltext Access 4 Pages 2005
Deposition of 60 nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices Fulltext Access 4 Pages 2005
Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O Fulltext Access 4 Pages 2005
Recent advances in computer vision and image processing using reconfigurable hardware Fulltext Access 4 Pages 2005
Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs Fulltext Access 4 Pages 2005
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics Fulltext Access 4 Pages 2005
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates Fulltext Access 4 Pages 2005
Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics Fulltext Access 4 Pages 2005
Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection Fulltext Access 4 Pages 2005
Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films Fulltext Access 4 Pages 2005
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices Fulltext Access 4 Pages 2005
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Fulltext Access 4 Pages 2005