Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Morphology; A1. Polymorphism; A1. Heat transfer; A1. High resolution X-ray diffraction; A2. Spray drying; B1. Mannitol;
مقالات ISI A1 پراش اشعه ایکس با وضوح بالا (ترجمه نشده)
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Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B3. Solar cells;
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A2. Bridgman technique; A2. Growth from solutions; B1. Organic compound
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal morphology; A1. High resolution X-ray diffraction; A2. Growth from solutions; B1. Organic compounds; B2. Dielectric materials;
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A2. Growth from solutions; B1. Organic compounds; B2. Nonlinear optic materials;
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Characterization; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Multilayers; B1. Suboxides; B2. Semiconducting silicon compounds
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A2. Gradient freeze technique; B1. Organic compounds; B2. Nonlinear optical material; B3. Photoluminescence
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution x-ray diffraction; A1. Nanobeam electron diffraction; A1. Stresses; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting germanium
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Nucleation; A1. High resolution X-ray diffraction; A2. Growth from solutions; B1. Organic compounds; B2. Dielectric materials
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Plasma-assisted molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Optimization of single crystal growth of candidate quantum spin-ice Pr2Hf2O7 by optical floating-zone method
Keywords: A1 پراش اشعه ایکس با وضوح بالا; B1. Pyrochlore; B.2 Quantum spin-ice; A1. Characterization; A1. High resolution X-ray diffraction; A2. Floating zone technique;
Single crystal growth and temperature dependent behaviors of melilite type piezoelectric crystal Ca2Al2SiO7
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A2. Czochralski method; A2. Single crystal growth; B2. Dielectric materials; B2. Piezoelectric materials;
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium arsenide substrate; B2. Semiconducting III-V materials;
Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal structure; A1. Defects; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
X-ray and Raman determination of InAsSb mole fraction for x <0.5
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Single crystal growth of 67%BiFeO3-33%BaTiO3 solution by the floating zone method
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A2. Floating zone technique; B2. Ferroelectric materials; B1. Titanium Ccompounds; A1. High resolution X-ray diffraction;
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0Â 0Â 1) substrates
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III-V materials;
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Water splitting photoelectrode;
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting compounds on silicon; B3. Infrared device;
Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Solar cells;
Growth rate dependence of boron incorporation into BxGa1âxAs layers
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A3. Molecular beam epitaxy; B1. Arsenides; B2. Semiconducting III-V materials; A1. High resolution X-ray diffraction; A1. Doping;
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A1. Interfaces; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A3. Metalorganic vapour phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Etching; A1. Surface processes; A1. High resolution X-ray diffraction; A2. Superlattices; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Direct observation of influence of secondary-phase defects on CZT detector response
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Defects; A1. Characterization; A1. Etching; A1. High resolution X-ray diffraction; B1. Cadmium compounds; B2. Semiconducting cadmium compounds;
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting ternary compounds; B3. Heterojunction semiconductor devices; B3. Infrared devices;
LPE growth and optical characteristics of GaAs1âxSbx epilayer
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Liquid phase epitaxy; B2. Semiconducting ternary compounds;
Reduced dislocation density in GaxIn1âxP compositionally graded buffer layers through engineered glide plane switch
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution x-ray diffraction; A1. Line defects; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting indium gallium phosphide; B3. Solar cells;
MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Quantum cascade lasers; A1. High resolution X-ray diffraction;
Impact of thickness on the structural properties of high tin content GeSn layers
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Segregation; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting germanium; B2. Alloys;
Magnetic anisotropy of epitaxially (100)- and (111)-oriented Sr0.8Ho0.2CoO3−δ thin films on SrTiO3 substrates
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Physical vapor deposition processes; B1. Oxides; B2. Magnetic materials
Reduced growth temperature of Bi6FeCoTi3O18 thin films by conductive bottom layers
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Substrates; A1. High resolution x-ray diffraction; A3. Laser epitaxy; B1. Oxide
Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Surface structure; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting materials
Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
CVD growth and properties of boron phosphide on 3C-SiC
Keywords: A1 پراش اشعه ایکس با وضوح بالا; B2. Semiconducting III-V materials; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; A1. X-ray topography; A1. Defects;
Growth of high quality mercurous halide single crystals by physical vapor transport method for AOM and radiation detection applications
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A1. X-ray topography; A2. Growth from vapor; A2. Single crystal growth; B1. Halides; B2. Acousto-optic materials;
Growth of NBT–BT single crystals by flux method and their structural, morphological and electrical characterizations
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal structure; A1. High resolution X-ray diffraction; A2. Growth from high temperature solutions; A2. Single crystal growth; B2. Dielectric materials
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Growth models; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapour deposition processes; B2. Semiconducting germanium; B2. Semiconducting silicon compounds
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Atomic force microscope; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting aluminum compounds;
Evolution of epilayer tilt in thick InxGa1−xAs metamorphic buffer layers grown by hydride vapor phase epitaxy
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Hydride vapor phase epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds
MOVPE growth of semipolar (112¯2) Al1−xInxNAl1−xInxN across the alloy composition range (0≤x≤0.550≤x≤0.55)
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Low pressure metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
High growth speed of gallium nitride using ENABLE-MBE
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A1. Cathodoluminescence; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides;
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Characterization; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Bismuth compounds; B2. Semiconducting gallium compounds.;
Bi flux-dependent MBE growth of GaSbBi alloys
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Bismuth compounds; B1. Gallium compounds; B2. Semiconducting III-V materials;
An investigation of sol–gel spin coating growth of wurtzite GaN thin film on 6H–SiC substrate
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Characterization; A1. Substrates; A1. High resolution X-ray diffraction; A2. Growth from solutions; B1. Nitrides; B2. Semiconducting gallium compounds
c-plane ZnO on a -plane sapphire: Inclusion of (11¯01) domains
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Electron backscatter diffraction; A1. High resolution X-ray diffraction; A1. Numerical simulation; A1. Stresses; A3. Chemical vapor deposition processes; B2. Semiconducting II–VI materials
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. High resolution x-ray diffraction; A1. Scanning tunneling microscopy; A1. Segregation; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting III-V materials;
Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting materials
Defect creation in InGaAs/GaAs multiple quantum wells-I. Structural properties
Keywords: A1 پراش اشعه ایکس با وضوح بالا; A1. Defects; A1. High resolution x-ray diffraction; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Superlattices; B2. Indium gallium arsenide;