Keywords: فلش مموری; Triboelectric nanogenerator (TENG); Tribotronics; Transient electronics; Flash memory; Data erasing; Junctionless transistor;
مقالات ISI فلش مموری (ترجمه نشده)
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Keywords: فلش مموری; A. Semiconductors; B. Liquid nitrogen; D. Cryoelectronics; F. Cryobiology; Flash memory;
Keywords: فلش مموری; Flash memory; SuperFlash; Non-volatile memory; Floating gate; Hot electron; Oxide degradation; Charge trapping; Single electron;
Keywords: فلش مموری; Charge trapping; Flash memory; X-ray irradiation; Charge loss; X-ray fluorescence;
Keywords: فلش مموری; Nanoparticles; Flash memory; Spin-on-glass; Capacitance; Retention;
Keywords: فلش مموری; Embedded search engine; Indexing techniques; Conditional top-k queries; Flash memory; Secure token; Secure personal cloud; Smart object;
Keywords: فلش مموری; Low-temperature electronics; Cryoelectronics; Biopreservation; Flash memory; Liquid nitrogen;
Keywords: فلش مموری; Flash memory; Microbattery; TCAD simulation; Data retention; Programming window
Keywords: فلش مموری; Conjugated small molecules; Heck coupling; Coplanarity; Non-volatile; Flash memory; Surface morphology
Keywords: فلش مموری; Flash memory; Garbage collection; Multi-version index; Multi-version data; Flash-based embedded database
Keywords: فلش مموری; Flash memory; I/O request; Extent mapping; Canonical extent
Keywords: فلش مموری; Flash memory; Write buffer; Log block; Flash translation layer; Solid-state disk; Storage device
Keywords: فلش مموری; File systems; Multimedia editing; Non-linear editing; Flash memory; Ext4; FAT
Keywords: فلش مموری; In-memory file systems; Hybrid memory file systems; Non-volatile memory; Flash memory; Performance
SADUS: Secure data deletion in user space for mobile devices
Keywords: فلش مموری; Secure deletion; User space; Encrypted filesystem; Flash memory; Android;
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40Â nm floating gate embedded-flash memory
Keywords: فلش مموری; ONO; Leakage current; Flash memory; Floating gate; 40Â nm embedded flash;
A macro SPICE model for 2-bits/cell split-gate flash memory cell
Keywords: فلش مموری; Flash memory; BSIM; SPICE; Split-Gate; 2-bits/cell;
Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p-Si/Au based hybrid gate stack for non volatile memory applications
Keywords: فلش مموری; Reduced graphene oxide (rGO); Nitrogen doping; Photo-catalytic; Flash memory; Charge trapping; Organic flexible electronics;
N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate
Keywords: فلش مموری; Field-effect transistor; Polyera⢠N2200; Self-assembled monolayer; Flash memory; Reduce graphene oxide; Gold nanoparticles;
Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks
Keywords: فلش مموری; Breakdown; Clustering model; Flash memory; High-κ dielectrics; Metal nanocrystal; Percolation;
Bit interleaved coded modulation to enable fractional bits-per-cell storage at NAND flash memory
Keywords: فلش مموری; Bit interleaved coded modulation; Fractional bits-per-cell; Error correction codes; Flash memory; Soft information generation
A page-granularity wear-leveling (PGWL) strategy for NAND flash memory-based sink nodes in wireless sensor networks
Keywords: فلش مموری; Wireless sensor networks; Sink nodes; Massive storage management; Flash memory; Page-granularity wear leveling; Bit error rate prediction
Effects of HfO2/SiON/SiN stacked trapping layer on operation characteristics of poly-Si flash memory devices
Keywords: فلش مموری; Poly-Si; Junctionless; Charge-trapping; HfO2; Si3N4; Flash memory
Effects of annealing on CeO2-based flash memories
Keywords: فلش مموری; CeO2; Flash memory; Annealing; Memory window; Crystallization;
Optimizing R-tree for flash memory
Keywords: فلش مموری; Spatial index; Flash memory; Buffer management; R-tree
A NAND flash management algorithm with limited on-chip buffer resource
Keywords: فلش مموری; Flash memory; Wear-leveling; Solid-State Drive (SSD); Controller
Characterizations of MoTiO5 flash memory devices with post-annealing
Keywords: فلش مموری; MoTiO5; Flash memory; Memory window; Annealing; Crystallization
Modeling the aging process of flash storage by leveraging semantic I/O
Keywords: فلش مموری; Flash memory; Aging; RAID; Rebuild; Semantic I/O;
Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layer
Keywords: فلش مموری; Poly-Si; Nanowire; Bandgap-engineering; HfO2; Si3N4; Flash memory;
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Keywords: فلش مموری; Zirconium oxide; High-k; Dielectric constant; MOS capacitor; MIM capacitor; Flash memory; Unipolar RRAM; Bipolar RRAM;
3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate
Keywords: فلش مموری; Bandgap-engineered SONOS; BE-SONOS; Gate-all-around; Flash memory; Vertical silicon pillar; Nitride trapping memory
HfO2 nanocrystal memory on SiGe channel
Keywords: فلش مموری; Hafnium oxide; Nanocrystals; Nonvolatile memories; Flash memory; SiGe channel
A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell
Keywords: فلش مموری; 3D; Floating gate; NAND; Flash memory
Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
Keywords: فلش مموری; Charge trap memory; Flash memory; Tunnel layer; Poly-Si channel
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations
Keywords: فلش مموری; TANOS; Charge-trapping memory; Compact modeling; Nitride-based trapping storage; Flash memory; Electron device simulation
Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories
Keywords: فلش مموری; Floating Gate; NAND; Flash memory; Scaling
A flash-aware write buffer scheme to enhance the performance of superblock-based NAND flash storage systems
Keywords: فلش مموری; NAND flash; Storage system; Solid state disk; Flash memory; Write buffer
Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices
Keywords: فلش مموری; Plasma damage; Field oxide recess; Flash memory; Leakage current; Simple plasma damage monitor;
Structural and electrical characteristics of a high-k Lu2O3 charge trapping layer for nonvolatile memory application
Keywords: فلش مموری; Metal-oxide-high-k-oxide-silicon (MOHOS); High-k Lu2O3; Charge trapping layer; Flash memory
Transient simulation to analyze flash memory programming improvements due to Germanium content in the substrate using Nonquasi-Static techniques
Keywords: فلش مموری; Flash memory; MOS memory circuits; Semiconductor device models; Simulation;
Flash program modeling using nonquasi-static and tunneling techniques
Keywords: فلش مموری; Flash memory; MOS memory circuits; Semiconductor device models; Simulation
Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack
Keywords: فلش مموری; Flash memory; Charge-trapping; Nitrogen-rich; Silicon nitride
Forensic analysis techniques for fragmented flash memory pages in smartphones
Keywords: فلش مموری; Digital forensics; Smartphone forensics; Flash memory; Unallocated area; Fragmented data
AD-LRU: An efficient buffer replacement algorithm for flash-based databases
Keywords: فلش مموری; Flash memory; Database buffer management; Replacement policy; Flash-based DBMS
Storage workload modelling by hidden Markov models: Application to Flash memory
Keywords: فلش مموری; Hidden Markov Model; Fluid model; Markov modulated Poisson process; IO workload; Flash memory
A FinFET memory with remote carrier trapping in ONO buried insulator
Keywords: فلش مموری; SOI; FinFETs; Nitride; Flash memory
Improved retention characteristic of charge-trapped flash device with sealing layer/Al2O3 or Al2O3/high-k stacked blocking layers
Keywords: فلش مموری; Charge trapping; Flash memory; High-k; Stacked blocking layer; Charge retention
Influence of metal gate and capping film stress on TANOS cell performance
Keywords: فلش مموری; Charge trapping; Flash memory; TANOS
Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
Keywords: فلش مموری; Flash memory; Fluorine; High-k dielectric; Inter-poly
Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
Keywords: فلش مموری; Flash memory; Charge trapping; Super-lattice channel; Si; Ge