Keywords: A1 عیوب; A1. Crystal morphology; A1. Defects; A1. Substrates; A3. Chemical vapor deposition processes; B2. Semiconducting III-V materials;
مقالات ISI A1 عیوب (ترجمه نشده)
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Keywords: A1 عیوب; A1.Crystal morphology; A1. Dissolution; A1. Graphitization; A1. Defects; B1.Diamond;
Keywords: A1 عیوب; A1. Defects; A1. Solubility; A1. X-ray diffraction; A2. Growth from solution; A2. Seed crystals; B1. Organic compounds;
Keywords: A1 عیوب; A1. Defects; A1. Stresses; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Germanium silicon alloys;
Keywords: A1 عیوب; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
Keywords: A1 عیوب; A2. Czochralski method; A1. Growth interface electromotive force; A1. Defects; A1. Convection; A1 Fluid flows; A1. Interfaces;
Keywords: A1 عیوب; B1. Diamond; A1. Defects; A1. Characterisation; A2. Growth from high temperature solution; A1. Recrystallisation; A1. Stresses;
Keywords: A1 عیوب; A1. Defects; A1. Directional solidification; A2. Seed crystals; B3. Solar cells;
Keywords: A1 عیوب; A1. Characterization; A1. Defects; A1.Growth models; A1. Nanostructures;
Keywords: A1 عیوب; A1. Stresses; A1. Defects; A1. X-ray topography; A2. Stepanov method; A2. Edge defined film fed growth; B1. Sapphire;
Keywords: A1 عیوب; A1. Low-dimensional structures; A1. Morphological stability; A1. Defects; A1. Computer simulation; B1. Nanomaterials;
Keywords: A1 عیوب; A1. Low dimensional structures; A3. Epitaxy; A1. Defects;
Keywords: A1 عیوب; A1. Defects; A1. Etching; A3. Chemical vapor deposition processes; B2. Semiconducting silicon;
Keywords: A1 عیوب; A1. Defects; A1. Nanostructures; A3. Microwave plasma chemical vapour deposition processes; B1. Diamond; B1. Nanomaterials;
Keywords: A1 عیوب; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Volume defects; A1. Segregation; B3. Solar Cells;
Keywords: A1 عیوب; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Planar defects; A1. Segregation; B3. Solar cells;
Keywords: A1 عیوب; A1. Defects; A1. Point defects; A2. Czochralski method; B2. Semiconducting silicon;
Keywords: A1 عیوب; A1. Directional solidification; A1. Defects; A2. Growth from melt; A2. Industrial crystallization; B2. Semiconducting silicon; B3. Solar cells
Keywords: A1 عیوب; A1. Etching; A1. Impurities; A1. Defects; B1. Diamond
Keywords: A1 عیوب; A1. Defects; A1. Solidification; A2. Seeded growth; B1. Multicrystalline silicon;
Keywords: A1 عیوب; A1. Characterization; A1. Defects; A3. Microwave plasma assisted chemical vapor deposition process; B1. Diamond
Keywords: A1 عیوب; A1. Directional solidification; A1. Crystal structure; A1. Defects; A2. Bridgman technique; Multicrystalline silicon;
Keywords: A1 عیوب; A1. Characterization; A1. Defects; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds;
Keywords: A1 عیوب; A1. Computer simulation; A1. Stresses; A1. Dislocation density; A1. Defects; A1. Directional solidification
Keywords: A1 عیوب; A1. Computer simulation; A1. Lennard-Jones clusters; A1. Nucleation; A1. Nanostructures; A1. Defects; A1. Fivefold symmetry
Keywords: A1 عیوب; A1. Biocrystallization; A1. Defects; A1. {110} twin; A1. X-ray diffraction; B1. Aragonite; B1. Calcium compounds;
Keywords: A1 عیوب; A1. Crystal structure; A1. Defects; A2. Growth from solutions; B1. Biological macromolecules; B1. Calcium compounds; B1. Minerals;
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Keywords: A1 عیوب; B2. Semiconducting materials; A3. Chemical vapor deposition processes; A1. Defects; B2. Semiconducting silicon compounds; A2. Growth from vapor;
Measurement and evaluation of the defects in Cd1âxZnxTe materials by observing their etch pits in real time
Keywords: A1 عیوب; A1. Defects; A1. Etching; A1. Line defects; A1. Volume defects; B2. Semiconducting II-VI materials;
Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
Keywords: A1 عیوب; A3. Metalorganic vapor phase epitaxy; B3. Solar cells; B2. Semiconducting III-V materials; A1. Defects;
Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?
Keywords: A1 عیوب; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
Relationship between carbon concentration and carrier lifetime in CZ-Si crystals
Keywords: A1 عیوب; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
Keywords: A1 عیوب; A1. Surfaces; A1. Defects; A3. Chemical vapor deposition processes; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Investigation of Cd1âxMgxTe as possible materials for X and gamma ray detectors
Keywords: A1 عیوب; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system
Keywords: A1 عیوب; 63.20.Dj; 78.30.âj; A1. Computer simulation; A1. Crystal structure; A1. Defects; A1. Dispersion curve calculation; A1. DV-Xα calculation; A1. Raman spectra; B1. Alloys; B2. Semiconducting ternary compounds;
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120â¯nm and 1180â¯nm
Keywords: A1 عیوب; A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Study on growth techniques and macro defects of large-size Nd:YAG laser crystal
Keywords: A1 عیوب; A2. Single crystal growth; A2. Czochralski method; A2. Large size; A1. Defects; B1. Nd:YAG; B1. Oxides;
Semiconductor crystals based on CdTe with Se - Some structural and optical properties
Keywords: A1 عیوب; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Keywords: A1 عیوب; A1. Defects; A1. Line defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting materials;
Impact of temperature and nitrogen composition on the growth of GaAsPN alloys
Keywords: A1 عیوب; A1. Defects; A2. 2-D epitaxial growth; A3. Molecular beam epitaxy; B1. Nitrogen composition; B1. GaAsPN; B3. Photovoltaic applications;
Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures
Keywords: A1 عیوب; A1. Crystal structure; A1. Defects; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
The growth of KNSH/KCSH bicrystals from aqueous solutions at a constant temperature difference
Keywords: A1 عیوب; A1. Defects; A2. Single crystal growth; B1 Mixed tutton salts; B2. Dielectric materials; B3. Optical filters;
Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD
Keywords: A1 عیوب; A3. MPCVD; A2. Diamond growth; A1. Dislocations; A1. Defects; A1. X-ray topography;
Structure, phase composition, and some properties of melt grown GaSe:Er crystals
Keywords: A1 عیوب; A1. Crystal structure; A1. Defects; A1. X-ray diffraction; A2. Single crystal growth; B2. Semiconducting gallium compounds;
Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain
Keywords: A1 عیوب; A1. Crystal structure; A1. Defects; A1. Stresses; A3. Thin film growth; B2. Magnetic materials; A1. Scanning transmission electron microscopy;
Growth of high-perfect mixed K2NixCo1-x(SO4)2·6H2O crystals for fabrication of high-efficiency UV optical filters
Keywords: A1 عیوب; A1. Defects; A1. Solid solutions; A2. Growth from solutions; B1. Sulfates; B3. Filters;
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method
Keywords: A1 عیوب; A1. Defects; A2. Bulk crystal growth; A2. Floating zone technique; A2. Single crystal growth; B2. Semiconducting silicon;
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films
Keywords: A1 عیوب; A1. Crystal structure; A1. Defects; A1. Nanostructures; A1. X-ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds
Keywords: A1 عیوب; A1. Defects; A1. Stresses; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitride; B2. Semiconducting III-V materials;
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials
Keywords: A1 عیوب; B1. Gallium compounds; B2. Semiconducting III-V materials; A1. Crystal structure; A1. Defects;