Keywords: A1. تغلیظ; A1. Doping; A1. Characterization; A3. Optical vapor supersaturated precipitation; A3. Solid state method; B1. Zinc compounds; B2. Semiconducting II-VI materials;
مقالات ISI A1. تغلیظ (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A1. تغلیظ; A1. Doping; A2. Bridgman technique; B1. Niobates;
Keywords: A1. تغلیظ; A1. Computer simulation; A1. Doping; A1. Segregation; A2. Micro-pulling-down growth; B1. Oxides;
Keywords: A1. تغلیظ; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting silicon;
Growth, phase and electronic structure of RbTiOPO4 crystals doped with antimony
Keywords: A1. تغلیظ; A1. Doping; A1. X-ray photoelectron spectroscopy; A1. Electronic structure; B1. RTP;
Growth and characterization of pure and Ca2+ doped MnHg(SCN)4 single crystals
Keywords: A1. تغلیظ; A1. Characterization; A1. Doping; A2. Growth from solution; A2. Single crystal growth; B2. Dielectric materials;
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
Keywords: A1. تغلیظ; A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B1. Gallium nitride;
Synthesis and characterization of purple NaAlSi2O6 jadeite under high pressure and high temperature
Keywords: A1. تغلیظ; A1. Characterization; A1. Doping; A1. X-ray diffraction; A2. Growth from melt; B1. Minerals;
Hot-pressed production and laser properties of ZnSe:Fe2+
Keywords: A1. تغلیظ; A1. Recrystallization; A1. Volume defects; A1. Doping; B2. Semiconducting II-VI; B3. Solid state lasers;
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0â¯0â¯1) substrate through controlled nanowire coalescence
Keywords: A1. تغلیظ; A1. Nanostructures; A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Light emitting diodes;
Boron codoping of Czochralski grown lutetium aluminum garnet and the effect on scintillation properties
Keywords: A1. تغلیظ; A1. Doping; A2. Czochralski method; B1. Rare earth compounds; B1. Oxides; B3. Scintillators;
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Keywords: A1. تغلیظ; B2. Semiconducting III-V materials; B3. Vertical power devices; A1. Doping; A1. Ion implantation;
Growth and characterization of metal doped and quasi mixed crystals based on ZnCd(SCN)4
Keywords: A1. تغلیظ; A1. Characterization; A1. Doping; A2. Growth from solution; A2. Single crystal growth; B2. Dielectric materials;
Probing the dynamics of crystal nucleation via measurements of emission lifetimes in crystalloluminescence of sodium chloride
Keywords: A1. تغلیظ; A1. Nucleation; A1. Doping; B1. Sodium chloride; B2. Phosphors;
Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications
Keywords: A1. تغلیظ; A2. Metalorganic vapor phase epitaxy; B1. Semiconducting gallium arsenide; A1. Doping; B3. Multijunction solar cells;
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
Keywords: A1. تغلیظ; A1. Defect; A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Structural and electrical properties of Ge-on-Si(0â¯0â¯1) layers with ultra heavy n-type doping grown by MBE
Keywords: A1. تغلیظ; A1. Impurities; A1. Doping; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
Growth and luminescent properties of Yb:YAG and Ca co-doped Yb:YAG ultrafast scintillation crystals
Keywords: A1. تغلیظ; A1. Doping; A2. Czochralski method; B1. Ytterbium compounds; B2. Scintillator materials;
Top-seeded solution growth and morphology change of RbTiOPO4:Ta single crystal
Keywords: A1. تغلیظ; A1. Doping; A2. Single crystal growth; A1. Crystal morphology; A1. Surface structure;
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
Keywords: A1. تغلیظ; A1. Doping; A3. Chemical vapor deposition process; B1. Germanium tin; A1. Delta-doping;
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals
Keywords: A1. تغلیظ; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
The growth rates of KDP crystals in solutions with potassium permanganate additives
Keywords: A1. تغلیظ; A1. Characterization; A1. Doping; A2. Growth from solutions; A2. Single crystal growth; B1. Potassium dihydrogen phosphate;
Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes
Keywords: A1. تغلیظ; B3. Infrared devices; B1. Antimonides; A3. Superlattices; A1. Doping;
Effects of Na co-doping on optical and scintillation properties of Eu:LiCaAlF6 scintillator single crystals
Keywords: A1. تغلیظ; A1. Doping; A2. Single crystal growth; B1. Lithium compounds; B2. Scintillator materials;
Growth rate dependence of boron incorporation into BxGa1âxAs layers
Keywords: A1. تغلیظ; A3. Molecular beam epitaxy; B1. Arsenides; B2. Semiconducting III-V materials; A1. High resolution X-ray diffraction; A1. Doping;
Preparation and laser modulation investigation of quadratic electro-optical crystal Cu:KTN with gradient refractivity effect
Keywords: A1. تغلیظ; A2. Growth from melt; A2. Single crystal growth; A1. Doping; B1. Potassium compounds; B3. Nonlinear optical;
Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure
Keywords: A1. تغلیظ; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B2. Semiconducting lead compounds; B3. Infrared devices;
Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111)
Keywords: A1. تغلیظ; A1. Doping; A1. NanoSIMS; A1. Scanning capacitance microscopy; A3. Metalorganic vapor phase epitaxy; A3. Selective area growth;
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
Keywords: A1. تغلیظ; A1. Computer simulation; A1. Convection; A1. Doping; A1. Surface processes; A2. Floating zone technique; B2. Semiconducting silicon;
Semipolar (202Ì
1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect
Keywords: A1. تغلیظ; B3. Light emitting diodes; B2. Semiconducting III-V materials; A3. Metalorganic chemical vapor deposition; A1. Doping;
Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells
Keywords: A1. تغلیظ; A1. Doping; A3. Molecular beam epitaxy; B1. Phosphide; B2. Semiconducting III-V materials;
Crystal growth of HVPE-GaN doped with germanium
Keywords: A1. تغلیظ; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Crystal growth and characterization of undoped and Dy-doped TlPb2Br5 for infrared lasers and nuclear radiation detection
Keywords: A1. تغلیظ; A2. Bridgman technique; A1. Doping; B1. Halides; B1. Semiconducting material; B3. Infrared devices;
Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction
Keywords: A1. تغلیظ; A1. Doping; A1. X-ray diffraction; A1. Defects; A1. Impurity; A2. Czochralski method; B2. Semiconducting silicon;
Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot
Keywords: A1. تغلیظ; A1. Minority carrier lifetime; A1. Doping; A1. Impurities; A2. Directional solidification; B2 Multi-crystalline Si;
Donor impurity incorporation during layer growth of Zn II-VI semiconductors
Keywords: A1. تغلیظ; A1. Doping; A1. Diffusion; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging
Keywords: A1. تغلیظ; A1. Characterisation; A1. Photoluminescence imaging; A1. Metal precipitates; A1. Point defects; A1. Doping; B2. Semiconducting silicon;
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
Keywords: A1. تغلیظ; A3. Molecular beam epitaxy; B1. Nitrides; A1. Doping; B2. Semiconducting III-V materials;
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Keywords: A1. تغلیظ; A1. Doping; A2. Growth from vapor; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon compounds;
Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping
Keywords: A1. تغلیظ; A1. Doping; A2. Growth from vapor; A2. Single-crystal growth; B2. Semiconducting silicon compounds;
Lifetime and migration length of B-related admolecules on diamond {1Â 0Â 0}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition
Keywords: A1. تغلیظ; B1. Diamond; A3. Chemical vapor deposition processes; A1. Doping; A1. Etching; A1. Growth models; B2. Semiconducting materials;
MBE growth and doping of AlGaP
Keywords: A1. تغلیظ; A1. Doping; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers
Keywords: A1. تغلیظ; A1. Doping; A1. Double Shockley stacking faults; A1. Heat treatment; A1. Rhombus-shaped; A1. X-ray topography; B1. 4H-SiC;
Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping
Keywords: A1. تغلیظ; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide;
Novel approach for n-type doping of HVPE gallium nitride with germanium
Keywords: A1. تغلیظ; A3. Hydride vapor phase epitaxy; A1. Doping; A2. Single Crystal Growth; B1. Gallium Compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
Keywords: A1. تغلیظ; A1. Doping; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
Keywords: A1. تغلیظ; A1. Crystal Morphology; B1. Nitrides; A1. Doping; A1. Atomic Force Microscopy; A3. Metalorganic chemical vapor deposition;
Growth and spectroscopic properties of Tb3+-doped Na3La9O3(BO3)8 crystal
Keywords: A1. تغلیظ; A1. Doping; A2. Single crystal growth; B1. Borates;
Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy
Keywords: A1. تغلیظ; A1. Doping; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting II-VI materials;
Growth and green defect emission of ZnPbO nanorods by a catalyst-assisted thermal evaporation-oxidation method
Keywords: A1. تغلیظ; A1. Doping; A1. Nucleation and growth; B2. Zinc oxide; B2. Optical materials;