Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
Keywords: B2 مواد نیمه هادی III-V; A1. Nucleation; A1. Surface structure; A3. Organometallic vapor phase epitaxy; B2. Semiconducting silicon; B2. Semiconducting III-V materials; B3. Solar cells;