Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenates; B2. Semiconducting III-V materials; B3. Infrared devices;
مقالات ISI B2 مواد نیمه هادی III-V (ترجمه نشده)
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Keywords: B2 مواد نیمه هادی III-V; A1. Low dimensional structures; A3. Molecular Beam Epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials;
Keywords: B2 مواد نیمه هادی III-V; A3. Superlattice; B3. Quantum cascade lasers; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B3. Infrared devices; B3. Quantum cascade lasers;
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B3. Solar cells;
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Metals; B2. Semiconducting III-V materials;
Keywords: B2 مواد نیمه هادی III-V; A1. Interfaces; A1. X-ray diffraction; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition
Keywords: B2 مواد نیمه هادی III-V; A1. Crystal morphology; A1. Desorption; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic vapor phase epitaxy; B3. Solar cells; B2. Semiconducting III-V materials; A1. Defects;
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120â¯nm and 1180â¯nm
Keywords: B2 مواد نیمه هادی III-V; A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing
Keywords: B2 مواد نیمه هادی III-V; A3. Chemical beam epitaxy; B2. Semiconducting III-V materials; A3. Quantum wells; A1. Optical properties; A1. Rapid thermal annealing;
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0â¯0â¯1) substrate through controlled nanowire coalescence
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Light emitting diodes;
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
X-ray and Raman determination of InAsSb mole fraction for x <0.5
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Heteroepitaxy of orientation-patterned nonlinear optical materials
Keywords: B2 مواد نیمه هادی III-V; A1. Characterization; A3. Hydride vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Nonlinear optical materials;
Analysis of InAsSb/GaAs submonolayer stacks
Keywords: B2 مواد نیمه هادی III-V; A1. Adsorption; A1. Characterization; A1. Photoluminescence; A1. X-ray fluorescence; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials;
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Keywords: B2 مواد نیمه هادی III-V; B2. Semiconducting III-V materials; A3. Metalorganic vapor phase epitaxy; A1. Characterization; A1. Substrates; B1. Nitrides;
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Keywords: B2 مواد نیمه هادی III-V; A1. Interfaces; A3. Metal organic chemical vapor deposition; B1. Nanomaterials; B1. Antimonides; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials
Keywords: B2 مواد نیمه هادی III-V; B1. Gallium compounds; B2. Semiconducting III-V materials; A1. Crystal structure; A1. Defects;
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals
Keywords: B2 مواد نیمه هادی III-V; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction
Keywords: B2 مواد نیمه هادی III-V; A1. High-resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials;
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
Keywords: B2 مواد نیمه هادی III-V; A1. Defects; A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B2. Semiconducting III-V materials;
Up-converted photoluminescence in InAs/GaAs heterostructures
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; A3. Quantum wells; A1. Optical properties; B3. Intermediate band solar cell;
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting compounds on silicon; B3. Infrared device;
Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth
Keywords: B2 مواد نیمه هادی III-V; A1. Computer simulation; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0Â 0Â 1) using molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Rare-earth compounds; B2. Semiconducting III-V materials;
Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Antimonide; B2. Semiconducting III-V materials;
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Growth models; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides; B1. Glasses; B2. Semiconducting III-V materials;
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer
Keywords: B2 مواد نیمه هادی III-V; A1. Heteroepitaxy; A1. X-ray diffraction; A2. Molecular beam epitaxy; B1. Antimonides; B1. Silicon substrate; B2. Semiconducting III-V materials;
Indium incorporation into InGaN: The role of the adlayer
Keywords: B2 مواد نیمه هادی III-V; A1. Surface processes; A3. Low press. metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III-V materials;
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Laser diodes;
Optical properties of InxGa1âxN/GaN quantum-disks obtained by selective area sublimation
Keywords: B2 مواد نیمه هادی III-V; A1. Sublimation; A1. Nanostructures; B1. Nitrides; B2. Semiconducting III-V materials;
Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic vapour phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Annealing effect of the InAs dot-in-well structure grown by MBE
Keywords: B2 مواد نیمه هادی III-V; A1. Photoluminescence; A3. Quantum dots; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport
Keywords: B2 مواد نیمه هادی III-V; A1. Growth models; A3. VLS transport; B1. Nitrides; B2. Semiconducting III-V materials;
Crystal growth of HVPE-GaN doped with germanium
Keywords: B2 مواد نیمه هادی III-V; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
Keywords: B2 مواد نیمه هادی III-V; A1. Stresses; A1. Surface structure; A1. Line defects; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;
Semipolar AlN and GaN on Si(100): HVPE technology and layer properties
Keywords: B2 مواد نیمه هادی III-V; B1. Silicon; B1. Silicon carbide; B2. Semiconducting III-V materials; A3. Hydride vapor phase epitaxy;
Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems
Keywords: B2 مواد نیمه هادی III-V; A1. Characterization; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting III-V materials;
Miscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition
Keywords: B2 مواد نیمه هادی III-V; A1. Diffusion; A1. Growth models; A1. Surface structure; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE
Keywords: B2 مواد نیمه هادی III-V; A1. Surfaces; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Nitrides; A1. Doping; B2. Semiconducting III-V materials;
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; A1. Defects;
Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
Keywords: B2 مواد نیمه هادی III-V; B3. Laser diodes; B2. Semiconducting III-V materials; A3. Molecular beam epitaxy; B1. Arsenates;
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow
Keywords: B2 مواد نیمه هادی III-V; A1. Characterization; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1âyBiy on offcut and mesa-patterned GaAs substrates
Keywords: B2 مواد نیمه هادی III-V; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Growth of free-standing bulk wurtzite AlxGa1âxN layers by molecular beam epitaxy using a highly efficient RF plasma source
Keywords: B2 مواد نیمه هادی III-V; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Chemical etching behavior of non-polar GaN sidewalls
Keywords: B2 مواد نیمه هادی III-V; A1. Etching; A1. Non-polar; B2. Gallium nitride; B2. Semiconducting III-V materials;
Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
Keywords: B2 مواد نیمه هادی III-V; A1. Nitridation; A3. Molecular beam epitaxy; B1. Dilute nitride; B2. Semiconducting III-V materials;