
Nanoparticle formation in 25-nm-SiO2 thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics
Keywords: نانوذارت; 41.75.Cn; 68.55.Ln; 61.48.+w; 81.07.âb; 81.40.Rs; Negative-ion beam; Ion implantation; Nanoparticle; Capacitance-voltage characteristics;