
Keywords: رویینگی، پسیواسیون; a-Si:H; Hydrogenated Amorphous Silicon; ALD; Atomic Layer Deposition; BSF; Back Surface Field; c-Si; Crystalline Silicon; HIT; Heterojunction with Intrinsic Thin layer; ICP-CVD; Inductively-Coupled Plasma Chemical Vapor Deposition; PVD; Physical Vapor Dep